Optical Engineering

Fundamental Aspects of Ultrathin Dielectrics on Si-based by Eric Garfunkel,Evgeni Gusev,Alexander Vul'

By Eric Garfunkel,Evgeni Gusev,Alexander Vul'

An extrapolation of ULSI scaling tendencies exhibits that minimal function sizes less than 0.1 mu and gate thicknesses of <3 nm should be required within the close to destiny. Given the significance of ultrathin gate dielectrics, well-focused simple clinical study and competitive improvement courses needs to proceed at the silicon oxide, oxynitride, and excessive okay fabrics on silicon platforms, in particular within the serious, ultrathin 1-3 nm regime. the most thrust of the current booklet is a assessment, on the nano and atomic scale, the advanced clinical matters with regards to using ultrathin dielectrics in next-generation Si-based units. The contributing authors are best scientists, drawn from educational, business and govt laboratories all through the area, and representing such backgrounds as uncomplicated and utilized physics, chemistry, electric engineering, floor technology, and fabrics technological know-how.
Audience: either specialist scientists and engineers who desire to maintain up with leading edge learn, and new scholars who desire to research extra in regards to the fascinating simple examine concerns proper to next-generation gadget technology.

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